Datasheet4U Logo Datasheet4U.com

HMBT8550 - PNP Transistor

Download the HMBT8550 datasheet PDF. This datasheet also covers the HMBT8550_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HMBT8550 is designed for general purpose amplifier applications.

Features

  • High DC Current: hFE=150-400 at IC=150mA.
  • Complementary to HMBT8050 SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT8550_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT8550
Manufacturer Hi-Sincerity Mocroelectronics
File Size 39.18 KB
Description PNP Transistor
Datasheet download datasheet HMBT8550 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMBT2222A NPN Switching Transistor SMD HAOHAI
HMBT2222AXLT1G General Purpose Transistor NPN Silicon HI-SINCERITY
HMBT2907AXLT1G General Purpose Transistor PNP Silicon HI-SINCERITY
HMBT3904 NPN Switching Transistor SMD HAOHAI
HMBT4401XLT1G General Purpose Transistor NPN Silicon HI-SINCERITY

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HMBT8599 PNP Transistor
HMBT8050 NPN Transistor
HMBT8099 NPN Transistor
HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR
HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 Description The HMBT8550 is designed for general purpose amplifier applications. Features • High DC Current: hFE=150-400 at IC=150mA • Complementary to HMBT8050 SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)......................................................
Published: |