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HM3N30R
Silicon N-Channel Power MOSFET
General Description：
VDSS
300
V
HM3N30R, the silicon N-channel Enhanced
ID
3
A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
2.5
W
which reduce the conduction loss, improve switching
RDS(ON)TYP
2.6
Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
SOT-223, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of LCD Power and adaptor.
HM3N30R Datasheet
