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HM3N20PR - 200V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The HM3N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 200V,ID =3A RDS(ON) < 1300mΩ @ VGS=10V (Typ:1000mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.

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Datasheet Details

Part number HM3N20PR
Manufacturer H&M Semiconductor
File Size 1.24 MB
Description 200V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HM3N20PR Datasheet
Additional preview pages of the HM3N20PR datasheet.

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Full PDF Text Transcription

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HM3N20PR 200V N-Channel Enhancement Mode MOSFET Description The HM3N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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