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HM3N10 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM1 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID = 2A RDS(ON) 1mΩ 7S @ VGS=10V RDS(ON) 1mΩ 7S @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

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Datasheet preview – HM3N10

Datasheet Details

Part number HM3N10
Manufacturer H&M Semiconductor
File Size 400.03 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3N10 Datasheet
Additional preview pages of the HM3N10 datasheet.

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Full PDF Text Transcription

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HM1 N-Channel Enhancement Mode Power MOSFET Description The HM1 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features ● VDS = 100V,ID = 2A RDS(ON) 1mΩ 7S @ VGS=10V RDS(ON) 1mΩ 7S @ VGS=4.
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