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HM3N10PR - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID = 3A RDS(ON).

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Datasheet preview – HM3N10PR

Datasheet Details

Part number HM3N10PR
Manufacturer H&M Semiconductor
File Size 457.95 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3N10PR Datasheet
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N-Channel Enhancement Mode Power MOSFET Description The HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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