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General Description：
HM3N150A the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(H), which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤8.0Ω)
Low Gate Charge (Typical Data: 9.3nC)
Low Reverse transfer capacitances(Typical:2.4 pF)
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
HM3N150A Datasheet
