HM3N10MR - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 100V,ID = 3A RDS(ON).

H&M Semiconductor

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Datasheet Details

Part number	HM3N10MR
Manufacturer	H&M Semiconductor
File Size	514.16 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM3N10MR Datasheet
Additional preview pages of the HM3N10MR datasheet.

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Full PDF Text Transcription

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HM3N10MR N-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 3A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.

Published: Jun 30, 2025 |