These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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GSM3911P 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technol...
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ct transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features -30V, -4.1A, RDS(ON)=55mΩ@VGS=-10V Fast switching Suit for -4.5V Gate Drive Applications Green Device Available SOT-23 package design Applications Notebook Load Switch Battery Protection Hand-held Instruments GSM3911P Packages & Pin Assignments GSM3911PJZF (SOT-23) Top Views P
GSM3911P Datasheet
