Datasheet Details
| Part number | GSM3909VP |
|---|---|
| Manufacturer | Globaltech |
| File Size | 533.08 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 GSM3909VP Datasheet
|
|
|
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- -30V, -5.1A, RDS(ON)=32mΩ@VGS=-10V.
- Improved dv/dt capability.
- Fast switching.
- Suit for -4.5V Gate Drive.