MW6S010NR1 Datasheet LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MW6S010NR1 lateral n-channel broadband rf power mosfets by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MW6S010NR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	761.88 KB
Description	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Datasheet	MW6S010NR1 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev.

3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.

Suitable for analog and digital modulation and multicarrier amplifier applications.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
On - Chip RF Feedback for Broadband Stability www. DataSheet4U. com.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
200°C Capable Plastic Package.
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	MW6S010NR1	RF Power Field Effect Transistors	NXP

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