MW6S004NT1 Datasheet RF Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MW6S004NT1 rf power field effect transistor by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MW6S004NT1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	522.37 KB
Description	RF Power Field Effect Transistor
Datasheet	MW6S004NT1 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MW6S004N Rev.

2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz.

Suitable for analog and digital modulation and multicarrier amplifier applications.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
On - Chip RF Feedback for Broadband Stability.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MW6S004NT1 1 - 2000 MHz, 4 W, 28 V.

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