MW6IC2420NBR1 Datasheet RF LDMOS Integrated Power Amplifier

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MW6IC2420NBR1 rf ldmos integrated power amplifier by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MW6IC2420NBR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	523.11 KB
Description	RF LDMOS Integrated Power Amplifier
Datasheet	MW6IC2420NBR1 Datasheet

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev.

0, 3/2007 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz.

This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters.
On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
Integrated ESD Protection.
200°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW6IC2420NBR1 2450 MHz, 20 W, 28 V CW.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number	Description
MW6IC2015GNBR1	RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2015NBR1	RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2240GNBR1	RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2240NBR1	RF LDMOS Wideband Integrated Power Amplifiers
MW6S004NT1	RF Power Field Effect Transistor
MW6S010GNR1	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MW6S010NR1	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs