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MW6S010GNR1 Datasheet LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MW6S010GNR1 datasheet PDF. This datasheet also includes the MW6S010NR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MW6S010NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev.

3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.

Suitable for analog and digital modulation and multicarrier amplifier applications.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip RF Feedback for Broadband Stability www. DataSheet4U. com.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Logo MW6S010GNR1 RF Power Field Effect Transistors NXP

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