MW6S010GNR1 Datasheet
RF Power Field Effect Transistors
Manufacturer: NXP Semiconductors
Download the MW6S010GNR1 datasheet PDF.
This datasheet also includes the MW6S010NR1 variant, as both parts are published together in a single manufacturer document.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.
Suitable for analog and digital modulation and multicarrier amplifier applications.
Key Features
Characterized with Series Equivalent Large - Signal Impedance Parameters.
On - Chip RF Feedback for Broadband Stability.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MW6S010N Rev. 5, 6/2009
MW6S010NR1 MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V.
MW6S010GNR1 Datasheet
