MW6S010NR1 Datasheet RF Power Field Effect Transistors

Manufacturer: NXP Semiconductors

MW6S010NR1 rf power field effect transistors by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	MW6S010NR1
Manufacturer	NXP Semiconductors
File Size	790.04 KB
Description	RF Power Field Effect Transistors
Datasheet	MW6S010NR1 Datasheet

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.

Suitable for analog and digital modulation and multicarrier amplifier applications.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
On - Chip RF Feedback for Broadband Stability.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MW6S010N Rev. 5, 6/2009 MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V.

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