Datasheet4U Logo Datasheet4U.com

MW6IC2015GNBR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

📥 Download Datasheet

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev.

2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications.

It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi - stage structure.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • Integrated ESD Protection.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MW6IC2015NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2240GNBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2240NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2420NBR1 RF LDMOS Integrated Power Amplifier
MW6S004NT1 RF Power Field Effect Transistor
MW6S010GNR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MW6S010NR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs