FPDA200V - HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	FPDA200V
Manufacturer	Filtronic Compound Semiconductors
File Size	57.52 KB
Description	HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
Datasheet	FPDA200V Datasheet
Additional preview pages of the FPDA200V datasheet.

Product details

Description

AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Features

S.
21 dBm Output Power at 1-dB Compression at 18 GHz.
12.5 dB Power Gain at 18 GHz.
55% Power-Added Efficiency.
Source Vias to Backside Metallization FPDA200V HIGH.

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Published: Apr 1, 2005 |