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FDME820NZT - MOSFET

General Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe.

Li-lon Battery Pack Baseband Switch Load Switch DC-DC Conversion G D

Key Features

  • Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A.
  • Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A.
  • Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A.
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
  • Free from halogenated compounds and antimony oxides.
  • HBM ESD protection level >2.5 kV (Note3).
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDME820NZT N-Channel PowerTrench® MOSFET October 2013 FDME820NZT N-Channel PowerTrench® MOSFET 20 V, 9 A, 18 mΩ Features „ Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A „ Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A „ Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level >2.5 kV (Note3) „ RoHS Compliant General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Applications „ Li-lon Battery Pack „ Baseband Switch „ Load Switch „ DC-DC Conversion G D Pin 1 D S DD S D D DD GS BOTTOM TOP MicroFET 1.