FDME820NZT - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDME820NZT
Manufacturer	Fairchild Semiconductor
File Size	256.53 KB
Description	MOSFET
Datasheet	FDME820NZT Datasheet
Additional preview pages of the FDME820NZT datasheet.

Product details

Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Li-lon Battery Pack Baseband Switch Load Switch DC-DC Conversion G D Pin 1 D S DD S D D DD GS BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to

Features

Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A.
Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A.
Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A.
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
Free from halogenated compounds and antimony oxides.
HBM ESD protection level >2.5 kV (Note3).
RoHS Compliant General.

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Published: Jan 10, 2017 |