FDD6N25 Key Features
- RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A
- Low Gate Charge (Typ. 4.5 nC)
- Low Crss (Typ. 5 pF)
- 100% Avalanche Tested
- Part: FDD6N25
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 893.09 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FDD6N20 | MOSFET |
| FDD6N20TM | MOSFET |
| FDD6N50 | N-Channel MOSFET |
| FDD6N50F | MOSFET |
| FDD6N50TM_F085 | 500V N-Channel MOSFET |