FDD6N50TM_F085 Key Features
- 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
- Low gate charge ( typical 12.8 nC)
- Low Crss ( typical 9 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC Q101
- RoHS pliant
- Part: FDD6N50TM_F085
- Description: 500V N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 891.86 KB
Other FDD6N50TM_F085 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDD6N50TM-F085 | N-Channel MOSFET |