FDD6N50F Key Features
- RDS(on) = 950 mΩ (Typ.) @ VGS = 10 V, ID = 2.75 A
- Low Gate Charge (Typ. 15nC)
- Low Crss (Typ. 6.3pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
- Part: FDD6N50F
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 607.16 KB
Other FDD6N50F Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDD6N50 | N-Channel MOSFET |
|
onsemi |
FDD6N50TM-F085 | N-Channel MOSFET |