FDD6N20TM Key Features
- RDS(on) = 600 mΩ (Typ.) @ VGS = 10 V, ID = 2.3 A
- Low Gate Charge (Typ. 4.7 nC)
- Low Crss (Typ. 6.3 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: FDD6N20TM
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 623.75 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FDD6N20 | MOSFET |
| FDD6N25 | N-Channel MOSFET |
| FDD6N50 | N-Channel MOSFET |
| FDD6N50F | MOSFET |
| FDD6N50TM_F085 | 500V N-Channel MOSFET |