FDD6N50 Key Features
- RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A
- Low Gate Charge (Typ. 12.8 nC)
- Low Crss (Typ. 9 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- Part: FDD6N50
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 435.45 KB
Other FDD6N50 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDD6N50 | N-Channel MOSFET |
|
onsemi |
FDD6N50TM-F085 | N-Channel MOSFET |