FDD6N20 Key Features
- RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A
- Low gate charge ( Typ. 4.7nC )
- Low Crss ( Typ. 6.3pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
| Part Number | Description |
|---|---|
| FDD6N20TM | MOSFET |
| FDD6N25 | N-Channel MOSFET |
| FDD6N50 | N-Channel MOSFET |
| FDD6N50F | MOSFET |
| FDD6N50TM_F085 | 500V N-Channel MOSFET |