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BTN5551K3 - General Purpose NPN Epitaxial Planar Transistor

Features

  • High breakdown voltage, BVCEO≥ 160V.
  • Pb-free lead plating package Symbol BTN5551K3 Outline TO-92L B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Note : Pulse test, pulse width≤300μs, duty cycle≤2% Symbol VCBO V.

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Datasheet Details

Part number BTN5551K3
Manufacturer CYStech
File Size 237.88 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN5551K3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN5551K3 Spec. No. : C208K3 Issued Date : 2012.06.28 Revised Date : 2012.10.02 Page No.
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