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BTN5551A3 - General Purpose NPN Epitaxial Planar Transistor

Description

The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.

Features

  • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
  • Complement to BTP5401A3 Symbol BTN5551A3 Outline TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg BTN5551A3 Limits 180 160 6 600 625 150 -55~+150 Unit V V V mA mW °C.

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Datasheet Details

Part number BTN5551A3
Manufacturer Cystech Electonics
File Size 257.06 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN5551A3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : 2012.10.02 Page No. : 1/7 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage.
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