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BTN5551N3 - General Purpose NPN Epitaxial Planar Transistor

Description

The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.

Features

  • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
  • Complement to BTP5401N3 Symbol BTN5551N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 225 150 -55~+150 Unit V V V mA mW °C °C BTN5551N3 CYStek Product Specificati.

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Datasheet Details

Part number BTN5551N3
Manufacturer Cystech Electonics
File Size 184.54 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN5551N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551N3 Description The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage.
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