30V/3.5A,
RDS(ON)=70mΩ(typ.)
@
V =5V GS
RDS(ON)=42mΩ(typ.) @ VGS=10V
Super High Dense Cell Design
High Power and Current Handling Capability
SOT-23 Package
Applications
Switching Regulators
Switching Converters
D
3
12
GS Top Vie
Full PDF Text Transcription for APM2306 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APM2306. For precise diagrams, and layout, please refer to the original PDF.
APM2306 N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/3.5A, RDS(ON)=70mΩ(typ.) @ V =5V GS RDS(ON)=42mΩ(typ.) @ VGS=10V • Super High Dense Cell Design •...
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V =5V GS RDS(ON)=42mΩ(typ.) @ VGS=10V • Super High Dense Cell Design • High Power and Current Handling Capability • SOT-23 Package Applications • Switching Regulators • Switching Converters D 3 12 GS Top View of SOT-23 Ordering and Marking Information APM2306 H andling C ode Temp. Range Package Code Package Code A : SOT-23 O perating Junction Tem p.
APM2306 Datasheet
