-16V/-3.5A
,
RDS(ON)=60mΩ(typ.)
@
V =-4.5V GS
RDS(ON)=70mΩ(typ.)
@
V =-2.5V GS
RDS(ON)=83mΩ(typ.) @ VGS=-1.8V
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SOT-23 Package
Applications
D
3
12
GS
Top View of SOT-23
S
Full PDF Text Transcription for APM2305 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APM2305. For precise diagrams, and layout, please refer to the original PDF.
APM2305 P-Channel Enhancement Mode MOSFET Features Pin Description • -16V/-3.5A , RDS(ON)=60mΩ(typ.) @ V =-4.5V GS RDS(ON)=70mΩ(typ.) @ V =-2.5V GS RDS(ON)=83mΩ(typ.) @ V...
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@ V =-4.5V GS RDS(ON)=70mΩ(typ.) @ V =-2.5V GS RDS(ON)=83mΩ(typ.) @ VGS=-1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications D 3 12 GS Top View of SOT-23 S • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Ordering and Marking Information G D P-Channel MOSFET APM2305 Handling Code Temp. Range Package Code Package Code A : SOT-23 Operation Junction Temp.
APM2305 Datasheet
