-20V/-2.8A
,
RDS(ON)=72mΩ(typ.)
@
V =-10V GS
RDS(ON)=100mΩ(typ.)
@
V =-4.5V GS
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SOT-23 Package
Applications
D
GS Top View of SOT-23
Power Management in Notebook
Full PDF Text Transcription for APM2301 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APM2301. For precise diagrams, and layout, please refer to the original PDF.
APM2301 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ V =-10V GS RDS(ON)=100mΩ(typ.) @ V =-4.5V GS • Super High Dense Cel...
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@ V =-10V GS RDS(ON)=100mΩ(typ.) @ V =-4.5V GS • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications D GS Top View of SOT-23 • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM2301 APM2301 A : H andling C ode Temp. Range Package Code M01X Package Code A : SOT-23 O peration Junction Tem p.
APM2301 Datasheet
