D
3
RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged
G S
1 2
SOT-23 Package
Top View of SOT-23
D
Applications
Power Management in Notebook Computer , Portabl
Full PDF Text Transcription for APM2312 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APM2312. For precise diagrams, and layout, please refer to the original PDF.
APM2312 N-Channel Enhancement Mode MOSFET Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V Pin Description D 3 RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ....
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ription D 3 RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged G S 1 2 SOT-23 Package Top View of SOT-23 D Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. www.DataSheet4U.com G Ordering and Marking Information APM2312 Handling Code Temp. Range Package Code S N-Channel MOSFET Package Code A : SOT-23 Operation Junction Temp.
APM2312 Datasheet
