-20V/-1.8A
,
RDS(ON)=108mΩ(typ.)
@
V =-4.5V GS
RDS(ON)=135mΩ(typ.)
@
V =-2.5V GS
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SOT-23 Package
Applications
D
GS
Top View of SOT-23
S
Power Management in Noteb
Full PDF Text Transcription for APM2313 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APM2313. For precise diagrams, and layout, please refer to the original PDF.
APM2313 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-1.8A , RDS(ON)=108mΩ(typ.) @ V =-4.5V GS RDS(ON)=135mΩ(typ.) @ V =-2.5V GS • Super High Dense C...
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) @ V =-4.5V GS RDS(ON)=135mΩ(typ.) @ V =-2.5V GS • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications D GS Top View of SOT-23 S • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G Ordering and Marking Information D P-Channel MOSFET APM2313 H andling C ode Temp. Range Package Code Package Code A : SOT-23 O perating Junction Tem p.
APM2313 Datasheet
