30V/3.5A ,
RDS(ON)=42mΩ(typ.) @ VGS=10V RDS(ON)=70mΩ(typ.) @ VGS=5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management in Notebook Computer,
Portable Equipment and Ba
Full PDF Text Transcription for APM2306A (Reference)
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APM2306A. For precise diagrams, and layout, please refer to the original PDF.
APM2306A N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/3.5A , RDS(ON)=42mΩ(typ.) @ VGS=10V RDS(ON)=70mΩ(typ.) @ VGS=5V • Super High Dense Cell Design •...
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@ VGS=10V RDS(ON)=70mΩ(typ.) @ VGS=5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
APM2306A Datasheet
