Datasheet Details
| Part number | AOWF12T60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 224.72 KB |
| Description | 12A N-Channel MOSFET |
| Datasheet |
 AOWF12T60 Datasheet
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| Part number | AOWF12T60 |
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| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 224.72 KB |
| Description | 12A N-Channel MOSFET |
| Datasheet |
AOWF12T60 Datasheet
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Product Summary The AOWF12T60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-262F Bottom View 700 48A < 0.52Ω 33nC 4.5µJ D DS G AOWF12T60 G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current TC=25°C TC=100°C ID 12* 9* Pulsed Drain Current C IDM 48 Avalanche Current C,J IAR 12 Repetitive avalanche energy C,J EAR 72 Single pulsed avalanche energy G EAS 607 MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 50 5 A A mJ mJ V/ns TC=25°C Power Dissipation B Derate above 25oC PD 28 0.2 W W/ oC Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Maximum 65 4.5 Units °C/W °C/W Rev.1.0 July 2013 www.aosmd.com Page 1 of 6 AOWF12T60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) Static D
AOWF12T60 600V,12A N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AOWF125A60 | N-Channel Power Transistor |
| AOWF12N50 | 12A N-Channel MOSFET |
| AOWF12N60 | 12A N-Channel MOSFET |
| AOWF12N65 | 12A N-Channel MOSFET |
| AOWF10N60 | 10A N-Channel MOSFET |
| AOWF10N65 | 10A N-Channel MOSFET |
| AOWF10T60 | 10A N-Channel MOSFET |
| AOWF11C60 | 11A N-Channel MOSFET |
| AOWF11S60 | Power Transistor |
| AOWF11S65 | Power Transistor |