Datasheet Details
| Part number | AOWF11C60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 430.11 KB |
| Description | 11A N-Channel MOSFET |
| Datasheet |
 AOWF11C60 Datasheet
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| Part number | AOWF11C60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 430.11 KB |
| Description | 11A N-Channel MOSFET |
| Datasheet |
AOWF11C60 Datasheet
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• Latest Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO-262F Top View Bottom View Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 80A < 0.44Ω 30nC 5.1µJ D DS G G D S AOWF11C60 Orderable Part Number Package Type AOWF11C60 TO-262F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C,J Repetitive avalanche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
G Form Tube S Minimum Order Quantity 1000 Max 600 ±30 11* 9* 80 11 60 750 100 20 28 0.2 -55 to 150 300 Max 65 4.5 Units V V A A mJ mJ V/ns W W/°C °C °C Units °C/W °C/W Rev.2.0: Auguest 2014 www.aosmd.com Page 1 of 6 AOWF11C60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) gFS VSD Static Drain-So
AOWF11C60 600V,11A N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AOWF11S60 | Power Transistor |
| AOWF11S65 | Power Transistor |
| AOWF10N60 | 10A N-Channel MOSFET |
| AOWF10N65 | 10A N-Channel MOSFET |
| AOWF10T60 | 10A N-Channel MOSFET |
| AOWF125A60 | N-Channel Power Transistor |
| AOWF12N50 | 12A N-Channel MOSFET |
| AOWF12N60 | 12A N-Channel MOSFET |
| AOWF12N65 | 12A N-Channel MOSFET |
| AOWF12T60 | 12A N-Channel MOSFET |