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AOWF10T60 Datasheet 10A N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Download the AOWF10T60 datasheet PDF. This datasheet also includes the AOW10T60 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AOW10T60-AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

Product Summary The AOW10T60 & AOWF10T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-262 Bottom View Top View TO-262F Bottom View 700 40A < 0.7Ω 23nC 3.4µJ D DS G G SD G S GD G SD AOW10T60 AOWF10T60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOW10T60 AOWF10T60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C,J Repetitive avalanche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 10 10* 6.6 6.6* 40 10 50 480 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 208 1.7 28 0.2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOW10T60 65 0.5 AOWF10T60 65 -- Maximum Junction-to-Case RθJC 0.6 4.5 * Drain current limited by maximum junction temperature.

S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.1.0 July 2013 www.aosmd.com Page 1 of 6 AOW10T60/AOWF10T60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V IDSS Zero Gate Voltage Dr

Overview

AOW10T60/AOWF10T60 600V,10A N-Channel MOSFET General.

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