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AOWF10N60 Datasheet 10A N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

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General Description

Product Summary The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-262 Bottom View Top View TO-262F Bottom View 700V@150℃ 10A < 0.75W D G G DS G SD S GD G SD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOW10N60 AOWF10N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 10 10* 7.2 7.2* 36 4.4 290 580 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 28 2 0.22 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOW10N60 65 0.5 AOWF10N60 65 -- Maximum Junction-to-Case RqJC 0.5 4.5 * Drain current limited by maximum junction temperature.

Overview

AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General.

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