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AOWF125A60 Datasheet N-Channel Power Transistor

Manufacturer: Alpha & Omega Semiconductors

Download the AOWF125A60 datasheet PDF. This datasheet also includes the AOW125A60 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AOW125A60-AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View TO-262F Top View Bottom View 700V 100A < 0.125Ω 39nC 6.3mJ D DS G AOW125A60 G SD Orderable Part Number AOW125A60 AOWF125A60 G DS AOWF125A60 Package Type TO262 TO262F G SD Form Tube Tube G S Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOW125A60 AOWF125A60 Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=20A,Tj=25°C VDS VGS ID IDM IAR EAR EAS dv/dt dv/dt di/dt 600 ±20 28 28* 18 18* 100 14 98 555 100 20 500 Power Dissipation B TC=25°C Derate above 25°C PD 312.5 2.5 32.5 0.25 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL -55 to 150 300 Units V V A A mJ mJ V/ns V/ns A/us W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.

AOW125A60 65 0.5 0.4 AOWF125A60 65 --3.8 Units °C/W °C/W °C/W Rev2.1: February 2024 www.aosmd.com Page 1 of 6 AOW125A60/AOWF125A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V,

Overview

AOW125A60/AOWF125A60 600V, a MOS5 TM N-Channel Power Transistor.

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