PXAC261002FC - Thermally-Enhanced High Power RF LDMOS FET

Name: PXAC261002FC
SKU: PXAC261002FC-1353687

Wolfspeed

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Datasheet Details

Part number	PXAC261002FC
Manufacturer	Wolfspeed
File Size	489.02 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAC261002FC-Wolfspeed.pdf

PXAC261002FC Product details

Description

The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band.

Features

include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Two-carrier WCDMA Drive-up VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V, ƒ = 2590 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz, Doherty Fixture 17 60 Gain (dB) Drain Efficiency (%) 16 Gain 15 50 40 14 30 13 20 12 Efficiency 10 11 29 c261002fc_g1.

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Published: May 1, 2019 |