PXAC201202FC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PXAC201202FC
Manufacturer	Infineon
File Size	399.56 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAC201202FC-Infineon.pdf

The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band.

input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz 3.84 MHz bandwidth 24 60 20 Efficiency 40 16 Gain 20 12 8 PAR @ 0.01% CCDF 0 -20 4 -40 0 30 35 40 45 c201202fc-v2-gr1a -60 50 Avera.

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Published: Nov 27, 2016 |