PXAC260602FC - Thermally-Enhanced High Power RF LDMOS FET

Name: PXAC260602FC
SKU: PXAC260602FC-1081599

Infineon

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Datasheet Details

Part number	PXAC260602FC
Manufacturer	Infineon
File Size	440.33 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAC260602FC-Infineon.pdf

PXAC260602FC Product details

Description

The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.

Features

include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, VGS = 2.62V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 17 Gain 16 60 50 15 40 14 Efficiency 13 30 20 12 pxac260602fc_g1 10 27 29 31 33 35 37 39 41 43.

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Published: Nov 27, 2016 |