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PXAC261212FC - Thermally-Enhanced High Power RF LDMOS FET

Description

The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band.

Features

  • dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261212FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2635 MHz 10 MHz carrier spacing, 8 dB PAR 3.84 MHz bandwidth 17 Efficiency 16 60 50 15 40 14 Gain 13 30 20 12 10 11 29 c261212fc-gr1.

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Datasheet Details

Part number PXAC261212FC
Manufacturer Infineon
File Size 395.17 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC261212FC Datasheet

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Full PDF Text Transcription

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PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261212FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2635 MHz 10 MHz carrier spacing, 8 dB PAR 3.
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