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PXAC261002FC - Thermally-Enhanced High Power RF LDMOS FET

Description

The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band.

Features

  • include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261002FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V, ƒ = 2590 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz, Doherty Fixture 17 60 16 Gain 15 50 40 14 30 13 20 12 Efficie.

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Datasheet Details

Part number PXAC261002FC
Manufacturer Infineon
File Size 158.01 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC261002FC Datasheet
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Full PDF Text Transcription

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PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261002FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V, ƒ = 2590 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
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