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PXAC243502FV - High Power RF LDMOS Field Effect Transistor

Datasheet Summary

Description

The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band.

Features

  • include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm, 3GPP WCDMA signal, 10 dB PAR 20 55 18 Efficiency 45 16 Gain 14 35 25 12 15 Features.
  • Asymmetric design - Main: 150 W P1dB - Peak: 200 W P.

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Datasheet Details

Part number PXAC243502FV
Manufacturer Infineon
File Size 393.74 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PXAC243502FV Datasheet
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Full PDF Text Transcription

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PXAC243502FV High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz Description The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.
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