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PXAC200902FC
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz
Description
The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric deisgn intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual path design, input and output matching, high gain and a thermallyenhanced push-pull package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 26 V, IDQ = 230 mA, ƒ = 1880 MHz
3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth
24 Efficiency
20
60 40
16 20 Gain
12 0
8 PAR @ 0.
PXAC200902FC Datasheet
