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PXAC260602FC - Thermally-Enhanced High Power RF LDMOS FET

Description

The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.

Features

  • include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, VGS = 2.62V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 17 Gain 16 60 50 15 40 14 Efficiency 13 30 20 12 pxac260602fc_g1 10 27 29 31 33 35 37 39 41 43.

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Datasheet Details

Part number PXAC260602FC
Manufacturer Infineon
File Size 440.33 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC260602FC Datasheet
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Full PDF Text Transcription

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PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, VGS = 2.62V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
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