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PXAE183708NB
Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz
Description
The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Package Type: PG-HB2SOF-8-1
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ= 800 mA, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
24
60
Efficiency
20
40
16
20
Gain
12
0
8
-20
PAR @ 0.
PXAE183708NB Datasheet
