PXAC243502FV - High Power RF LDMOS Field Effect Transistor

Infineon

Datasheet Details

Part number	PXAC243502FV
Manufacturer	Infineon
File Size	393.74 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PXAC243502FV-Infineon.pdf

The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band.

include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm, 3GPP WCDMA signal, 10 dB PAR 20 55 18 Efficiency 45 16 Gain 14 35 25 12 15 Features.
Asymmetric design - Main: 150 W P1dB - Peak: 200 W P.

📁 PXAC243502FV Similar Datasheet

PXAC241002FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC200902FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC210552FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC261002FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC37 - XA 16-bit microcontroller family 32K/1024 OTP CAN transport layer controller 1 UART/ 1 SPI Port/ CAN 2.0B/ 32 CAN ID Filters/ transport layer co-proce (NXP)
PXAC37KBA - XA 16-bit microcontroller family 32K/1024 OTP CAN transport layer controller 1 UART/ 1 SPI Port/ CAN 2.0B/ 32 CAN ID Filters/ transport layer co-proce (NXP)
PXAC37KBBD - XA 16-bit microcontroller family 32K/1024 OTP CAN transport layer controller 1 UART/ 1 SPI Port/ CAN 2.0B/ 32 CAN ID Filters/ transport layer co-proce (NXP)
PXAC37KFA - XA 16-bit microcontroller family 32K/1024 OTP CAN transport layer controller 1 UART/ 1 SPI Port/ CAN 2.0B/ 32 CAN ID Filters/ transport layer co-proce (NXP)

Other Datasheets by Infineon

Published: Feb 21, 2016 |