VBT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifie.

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Datasheet Specifications

Part number: VBT1060C-E3
Manufacturer: Vishay ↗
File Size: 196.02 KB
Datasheet: VBT1060C-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT1060C PIN 1 K PIN 2 HEATSINK VIT1060C 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. P

VBT1060C-E3 Distributors

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VBT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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