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VBT1045BP Trench MOS Barrier Schottky Rectifier

VBT1045BP Description

VBT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 .

VBT1045BP Features

* TMBS® TO-263AB K
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2
* Compliant to RoHS Directive 2011/65/EU 1 VBT1045BP PIN 1 PIN 2 K HEA

VBT1045BP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTCS IF(DC) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max. (DC forward current) 10 A 45 V 100 A 0.52 V 150 °C 200 °C Case: TO-263AB Molding co

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Datasheet Details

Part number
VBT1045BP
Manufacturer
Vishay ↗
File Size
141.64 KB
Datasheet
VBT1045BP_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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